TFS 200

Equipment

Thin Film System TFS 200 for ALD research

The TFS 200 is the most flexible ALD research platform ever designed for research and development. All details of the system are realized with flexibility, modularity and ease of use in mind. With the TFS 200, the freedom of coating and application development is placed completely in the hands of the operator, not limiting it by system-related restrictions.

Plasma, particle and high aspect ratio ALD

Direct and remote plasma-enhanced deposition (PEALD) is available in the TFS 200 as a standard option. The plasma is capacitively-coupled (CCP), which is the industry standard of today. Particle ALD™, developed by ALD NanoSolutions, Inc., is also available for the first time in commercial research ALD systems, thanks to a unique collaboration agreement with Beneq. The TFS 200 can coat planar objects, particles, porous bulk materials and complex 3D shapes with very high aspect ratio features. Depending on the substrate, a selection of three standard reaction chamber designs are available, as well as any customized designs our customers’ cases might require.

The precursor capabilities of the TFS 200 are unique. A total maximum of 8 gas lines, 4 liquid sources and 4 hot sources fulfil the most demanding of requirements. Hot source options include temperature readiness up to 500 °C.

Performance highlights

Down to 100 nm particle coating in fluidized bed reactor option
Direct and remote capacitive coupled plasma available for plasma-enhanced ALD (PEALD) option
Process cycle time customarily less than 2 seconds. In specific cases even less than 1 second (thickness uniformity variation < ±1% for, e.g., Al₂O₃ on 200 mm wafer).
High Aspect Ratio (HAR) available for structures with deep trenches and porous substrates
Hot source versatility, up to 500 °C setup as standard option
High speed and capacity data logging and trend tools for human machine interface (HMI)
Cold-wall vacuum chamber for rapid heating and cooling
Auxiliary entry ports in vacuum chamber enable plasma, in situ diagnostics etc.
Hot-wall reaction chamber for uniform substrate temperature and to prevent precursor condensation and secondary reactions
Three different reaction chamber designs, as well as any customized design
Substrate rotation option
Load lock available for rapid substrate change and integration with other equipment
Clean-room compatible.

Technical specifications

Substrate temperature range	25 - 500 °C
Reaction chamber types and dimensions	- single wafer: ø200 × 3 (mm) - single wafer plasma: ø200 × 3 (mm) - 3D/batch of wafer: ø200 × 95 (mm) - customized: by request
Gas lines	up to 8
Liquid sources (+5 °C to ambient)	up to 4
Hot sources HS 300 (ambient to 300 °C)	up to 4
Hot sources HS 500 (ambient to 500 °C)	up to 2
Plasma option (PEALD)	- power: 300 W - type: capacitively coupled plasma (CCP)
Fluidized bed particle coating option (Particle ALD)	- particle size (min.)¹: 100 nm - 1 µm - sample volume (max.): 50 - 75 cm³ - temperature (max.)²: 450 °C
Control system	PLC control with PC user interface
Main dimensions, ALD system (L × W × H)	1325 × 600 × 1298 (mm)
Main dimensions, electric cabinet (L × W × H)	1000 × 300 × 1600 (mm)