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Surface Passivation of c-Si Solar Cells
Surface passivation of c-Si solar cell wafers improves efficiency, through increased effective lifetime of charge carriers. Both
front surface and rear surface passivations are beneficial. ALD Al2O3
provides an effective, low temperature coating solution for surface passivation. Examples of c-Si solar cell surfaces,
which benefit from ALD Al2O3 surface passivation are, mildly doped
p-type or n-type base (rear surfaces) and highly boron-doped p+ emitter (front surface).
• 1-2%-unit increase in efficiency
• Surface passivation based on a high negative fixed charge
• No absorption in the visible part of the spectrum; enhances also reflection of IR light
from the back electrode
• Low temperature processing
• Excellent uniformity
• Automated wafer loading and unloading
• High throughput TFS 4x300 production ALD systems, up to 1500 wafers/hr
Rear Surface Passivation presentation in PDF-format
Rear Surface Passivation brochure in PDF-format
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